| 摘要 |
PROBLEM TO BE SOLVED: To ensure a high transmittance and a low resistance value, to suppress the occurrence of an abnormal electric discharge in DC sputtering over a long period of time and to efficiently form a film excellent in characteristics by forming a double oxide contg. a specified amt. of In and consisting substantially of Zn, In and O. SOLUTION: The ZnO-base sintered compact is Zn-In double oxide contg. 0.3-5 at.% In. The sintered compact preferably has >=4.8 g/cm<3> sintering density and the average grain diameter of the multiple oxide is preferably 3-20 μm. The max. diameter of holes present in the sintered compact is <=2 μm and the surface resistance value is <=0.1 Ω.cm. Starting materials for the sintered compact such as ZnO and In2 O3 have <=1 μm average primary particle diameter. In order to incorporate 0.3-5 at.% In, 0.5-8.4 wt.% (expressed in terms of In2 O3 ) In2 O3 powder is desirably added to ZnO powder. Sintering is desirably carried out by pressureless sintering. |
