发明名称 Circuitry for improving performance of electret microphone
摘要 In one embodiment of the invention there is provided an electret microphone circuit including an electret microphone including a field effect transistor (FET) having a gate coupled to an electret element, a drain coupled to provide audio frequency output to an audio output node, and a source coupled to ground via a first resistor so as to reduce drain current swings; and an RLC circuit coupled to the drain for configuring the audio frequency output from the drain to desired characteristics. In an alternative embodiment there is provided a circuit coupled to said FET for operating said FET in a source follower mode so as to create low output impedance. In another embodiment of the invention there is provided a method of improving performance of an electret microphone, the microphone including a field effect transistor (FET) having a gate coupled to an electret element, a drain coupled to provide audio frequency output to an audio output node, and a source. The method includes coupling the source to ground via a first resistor so as to reduce drain current swings; and operating the FET in a source follower mode so as to create low output impedance. In another embodiment there is provided a step of configuring the audio frequency output from the drain to desired characteristics.
申请公布号 US5978491(A) 申请公布日期 1999.11.02
申请号 US19970968307 申请日期 1997.11.12
申请人 VXI CORPORATION 发明人 PAPADOPOULOS, COSTAS
分类号 H04R19/01;(IPC1-7):H04R3/00 主分类号 H04R19/01
代理机构 代理人
主权项
地址