发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices. |
申请公布号 |
KR100228231(B1) |
申请公布日期 |
1999.11.01 |
申请号 |
KR19940035807 |
申请日期 |
1994.12.20 |
申请人 |
SHARP CORPORATION |
发明人 |
MAKITA, NAOKI;FUNAI, TAKASHI;YAMAMOTO, YOSHITAKA;MITANI, YASUHIRO;NOMURA, KATSUMI;MIYAMOTO, TADAYOSHI;KOSAI, TAKAMASA |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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