| 摘要 |
PURPOSE:To make it possible to perform high speed ashing, by setting a reaction space between an outflow plate and a substrate to be treated with spacers, and keeping the reaction interval of ashing constant repeatedly. CONSTITUTION:At the same time when an upper chamber 5 and a lower chamber 9 are linked, cylindrical spacers 8, which are provided at a plurality of places at the lower surface of the peripheral part of a disk 7 are contacted with a mounting stage 12. A space between the disk 7 and a wafer 14 at the time of the contact is set at 0.5-20 mm. The desired interval can be set by the contact of the spacers 8 and the surface of the mounting stage 12. Namely, the interval of ashing reactions can be set repeatedly. Thus the desired interval setting procedure can be performed at a high speed. A single-wafer step, by which semiconductor wafer can be treated one by one, and which is suitable for treating the semiconductor wafer having large diameters, can be carried out.
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