发明名称 |
FUSIBLE FUSE IN SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURE THEREOF |
摘要 |
An integrated circuit is provided having a metal fuse link (36) severable by a laser beam which may enhance the long term reliability of metal interconnects and the fuse link (36). The integrated circuit includes an insulating layer (22) formed on a semiconductor substrate (20); at least one pair of metal wiring layers (38A,38B) formed on the insulating layer (22) and preferably having ends opposite to each other; and a barrier metal fuse layer (32), preferably formed on the upper surfaces of the metal wiring layers, on the side surfaces of the opposing ends and in between the ends, to define a fuse link (36) severable by irradiation with laser beam energy, the fuse layer (32) being less susceptible to electromigration than the metal wiring layers (38A,38B) and/or more absorptive of irradiating laser beam energy than the metal wiring layers (38A,38B). <IMAGE> <IMAGE> |
申请公布号 |
KR100228533(B1) |
申请公布日期 |
1999.11.01 |
申请号 |
KR19970026418 |
申请日期 |
1997.06.23 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
PARK, YONG;LEE, SOO-CHEOL |
分类号 |
H01L21/82;H01L23/525;H01L27/10;(IPC1-7):H01L27/10 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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