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发明名称
METHOD OF FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE
摘要
申请公布号
KR100228385(B1)
申请公布日期
1999.11.01
申请号
KR19960069816
申请日期
1996.12.21
申请人
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
PARK, BYUNG-SUN;LEE, JIN-HEE;YOON, HYUNG-SUB;PARK, CHUL-SOON;PYON, KWANG-EUI
分类号
H01L21/28;H01L21/285;H01L21/335;H01L29/423;(IPC1-7):H01L21/28
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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