| 摘要 |
PROBLEM TO BE SOLVED: To ensure long-term reliability with no change in an FMR function that relaxes influence of breakdown strength deterioration, even when a semiconductor device is used for a long time. SOLUTION: A semiconductor device is provided with an (n) type low impurity concentration first semiconductor region 1, a (p) type high impurity concentration second semiconductor region 2 provided on a part of one plane of the first semiconductor region, a (p) type high impurity concentration third semiconductor region 3 junctioned to the other plane of the first semiconductor region 1, an emitter electrode 5 arranged on the second semiconductor region 2, and a collector electrode 6 arranged on the third semiconductor region 3. The semiconductor device has at least one auxiliary electrode 8 which is Schottky-junctioned to the first semiconductor region 1 in a termination region. The auxiliary electrode 8 is arranged in such a manner that at least a part of the electrode is formed inside a groove 9 formed on one plane of the first semiconductor region 1. |
