摘要 |
<p>PROBLEM TO BE SOLVED: To provide a two-dimensional image detector of excellent responsivenss, capable of coping with a dynamic image, and a manufacture thereof, by forming a semiconductor material such as CdTe or CdZnTe on an active matrix substrate at a low temperature of 300 deg.C or less. SOLUTION: In a two-dimensional image detector provided with an active matrix substrate 1 including a picture element array layer, and an opposing substrate 2 including an electrode part and a semiconductor layer, the picture element array layer of the active matrix substrate 1 is arranged to be faced to the semiconductor layer of the opposing substrate 2, both substrates 1, 2 are connected mutually by conductive particles 3, the particles 3 are fixed by both the first adhesive layer 3b formed on the active matrix substrate 1 and the second adhesive layer 3a formed on the opposing substrate 2.</p> |