发明名称 TWO DIMENSIONAL IMAGE DETECTOR, AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a two-dimensional image detector of excellent responsivenss, capable of coping with a dynamic image, and a manufacture thereof, by forming a semiconductor material such as CdTe or CdZnTe on an active matrix substrate at a low temperature of 300 deg.C or less. SOLUTION: In a two-dimensional image detector provided with an active matrix substrate 1 including a picture element array layer, and an opposing substrate 2 including an electrode part and a semiconductor layer, the picture element array layer of the active matrix substrate 1 is arranged to be faced to the semiconductor layer of the opposing substrate 2, both substrates 1, 2 are connected mutually by conductive particles 3, the particles 3 are fixed by both the first adhesive layer 3b formed on the active matrix substrate 1 and the second adhesive layer 3a formed on the opposing substrate 2.</p>
申请公布号 JPH11295144(A) 申请公布日期 1999.10.29
申请号 JP19980100853 申请日期 1998.04.13
申请人 SHARP CORP 发明人 IZUMI YOSHIHIRO;TERANUMA OSAMU
分类号 G01J1/02;G01T1/24;G02F1/133;G02F1/136;G02F1/1368;H01L27/14;H01L27/146;H01L29/786;H04N5/32;(IPC1-7):G01J1/02 主分类号 G01J1/02
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