FLOATING GATE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a flash memory cell and an operational bias approach which allow programming operations to be carried out significantly faster. SOLUTION: A floating gate memory device is based on the use of band-to- band tunneling induced hot electron injection in cells to be programmed and on the use of triple-well floating gate memory structures. In the structure band- to-band tunneling current is induced from the semiconductor body to one of the source 13 and drain 14 near the channel, and applying a positive bias voltage to the control gate to induce hot electron to be injected into the floating gate 15. The other of the terminal of the source 13 and drain 14 is floated, that is disconnected so that current does not flow through that terminal. The band-to- band tunneling current is induced by applying a reference potential to one of the source and drain.