发明名称 SOLUTION FOR THIN FILM FORMATION AND FORMATION OF THIN FILM
摘要 PROBLEM TO BE SOLVED: To increase the stability of the solution for forming a thin film and thereby make it possible to form a thin film of the target composition easily, by dissolving at least one of an organic bismuth composition, an organic strontium compound, an organic titanium compound, and an organic tantalum compound in a ring ether derivative. SOLUTION: Triphenylbismuth is preferably used for an organic bismuth compound for forming a thin film. In like manner, strontium dipivaloylmethanate tetraglyme is preferably used for an organic strontium compound and alkoxide such as propoxide, ethoxide, and the like or aβ-diketone compound for a titanium or tantalum compound. As for the organic solvent to dissolve these organic metal compounds in a ring ether derivative, preferably, 2-methyltetrahydrofuran is used. The density of these organic metal compounds in this solution is preferably about 0.05-1 mol/liter. Using these organic metal compounds, a thin film is fabricated by MOCVD.
申请公布号 JPH11297680(A) 申请公布日期 1999.10.29
申请号 JP19980098655 申请日期 1998.04.10
申请人 MITSUBISHI MATERIALS CORP 发明人 SAI ATSUSHI;WAKABAYASHI KAZUO;OGI KATSUMI
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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