发明名称 Stripping of deposits, especially silicon deposits, from the interior surface of a plasma-enhanced CVD reactor used for processing electronic and electrical devices
摘要 The delivery rate of the stripping gas during the stripping process is reduced during the stripping process. Control of the reduction in the gas delivery rate is achieved by monitoring an element of the gas discharged from the reactor, in order to reduce the amount of stripping gas required and to decrease the atmospheric lifetime of the discharged gas. Dry stripping of the interior surface of a reactor under vacuum involves: (a) evacuating the reactor; (b) generating a luminescent discharge in the interior of the reactor; (c) introducing a reactive stripping gas into the interior of the reactor, and reacting the gas with the surface; and (d) removing the gas together with the stripped products from the reactor. The process also includes a stage of establishing an initial delivery rate of the stripping gas into the reactor, and reduction of the delivery rate after a predetermined time and during the reaction between the gas and the surface. The stripping gas comprises a mixture of SF4, as a main component, and, preferably, oxygen. Deposits based on silicon, carbon, refractory metals and, especially, silicon are removed. An Independent claim is given for the vacuum treatment reactor (1). It comprises: a pump (11); a luminescence discharge generator (5); a gas inlet joined to a stripping gas reservoir (7) via a delivery rate control device (9); and a control unit (13, 15, 17, 19, 20) whose output is operationally joined to the control inlet of the gas delivery rate control device (9), and which generates an output signal to decrease the gas delivery rate to the reactor (1) for a predetermined time during a predetermined dry stripping cycle; and a wet cleaning unit below the reactor.
申请公布号 FR2777913(A1) 申请公布日期 1999.10.29
申请号 FR19990005375 申请日期 1999.04.28
申请人 BALZERS HOCHVAKUUM AG 发明人 TURLOT EMMANUEL;SCHMITT JACQUES;GROUSSET PHILIPPE
分类号 H01L21/302;C23C16/44;C23F4/00;H01L21/00;H01L21/3065;H05H1/46 主分类号 H01L21/302
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