发明名称 |
Wafer processing method. |
摘要 |
<p>First, silicon wafers are formed by cutting silicon monocrystalline ingot into slices (STEP 1). Then, back side and main surfaces of the wafers are subjected to lapping and etching processes (STEP 2). Next, the wafers are submerged into treatment solution and ultrasonic waves are applied to the wafer surface via the treatment solution to clean at least one of the surfaces of each of the wafers and form gettering damage on the wafer surface (STEP 3). After this, the main surfaces of the wafers which have been subjected to the cleaning and damage-forming process and on which semiconductor elements are to be formed are polished into mirror finish.</p> |
申请公布号 |
EP0319805(A1) |
申请公布日期 |
1989.06.14 |
申请号 |
EP19880119714 |
申请日期 |
1988.11.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUSHITA, YOSHIAKI C/O PATENT DIVISION;MIYASHITA, MORIYA C/O PATENT DIVISION;WAKATSUKI, MAKIKO C/O PATENT DIVISION;TSUCHIYA, NORIHIKO C/O PATENT DIVISION;KUBOTA, ATSUKO C/O PATENT DIVISION |
分类号 |
H01L21/304;H01L21/306;H01L21/322 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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