| 摘要 |
PROBLEM TO BE SOLVED: To peel off a film formed on a substrate surface surely and quickly. SOLUTION: In a substrate treating apparatus, a first peeling tank 14a, a second peeling tank 14b, a third peeling tank 14c, a rinsing tank 14d and a drying tank 14e are arranged in series, a substrate W is carried in the respective tanks in sequence, and peeling processes are executed to the substrate W in the peeling tanks 14a-14c. In the first peeling tank 14a, the substrate W is dipped in chemical liquid excited by an ultrasonic wave in a low frequency range. In the second peeling tank 14b, a first nozzle 36 spouts high pressure chemical liquid against the substrate W, and then a second nozzle 38 spouts chemical liquid excited by an ultrasonic wave in a high frequency range against the substrate W. In the third peeling tank 14c, nozzles 60a, 60b spout low pressure chemical liquid against the substrate W. |
