| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing semiconductor device, whereby a Cu plating film is formed on a semiconductor wafer, foreign matter produced by the chemical-mechanical polishing is suppressed and manufacturing yield of the semiconductor device is improved. SOLUTION: The peripheral edge of an Si wafer 100 is masked with a clamp ring 223, a TiN barrier film 108 is formed by the sputtering, and a Cu seed film 109 is formed on a wide area to cover the TnN barrier film 108 by the sputtering using a clamp ring 223B having a large inner diameter, thereby preventing the TiN barrier film 108 from being exposed even if the positional deviation occurs when forming the TiN barrier film 108 and Cu seed film 109. Thus, the Cu plating film 110 on the Cu seed film 109 never peels off from the TiN barrier film 108 to avoid producing foreign matter and defective products of semiconductor devices due to the foreign matter can be suppressed to improve the manufacturing yield of the semiconductor device. |
