| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating light-emission characteristics of an epitaxial wafer for a light-emitting diode, wherein the light-emission intensity of a wafer is evaluated in non-destructive manner without forming a groove for preventing current dispersion. SOLUTION: In a method for evaluating light-emission characteristics of an epitaxial wafer 1 for a light-emission diode in which an electrode 5 is allowed to contact the epitaxial wafer 1 and a current is injected to emit light, whose intensity is measured, a circular ring electrode 3 and a needle-like electrode 4 which is provided at the center of the circular ring electrode 3 are used for the electrode 5, and the needle-like electrode 4 is applied with DC voltage and AC voltage, with the light-emission intensity which is measured by an apparatus operated by AC voltage. |
