| 摘要 |
PROBLEM TO BE SOLVED: To efficiently increase light-emission intensity by improving the joint configuration of a light-emitting part, related to a group III nitride semiconductor light-emitting element. SOLUTION: For a light-emitting part 10 of the group III nitride semiconductor light-emitting element, an n-type light-emitting layer 2 of indium-contained group III nitride semiconductor is sandwiched between an n-type barrier layer 1 of group III nitride semiconductor and a p-type barrier layer 3, which a double-hetero joint configuration such as a band discontinuity on a conductive band side of the light-emitting layer 2, and the p-type barrier layer 3 is at least 0.3 electron volt(eV) provided, while in the middle of the n-type barrier layer 1 and the light-emitting layer 2, such-an n-type intermediate layer 4 as a band discontinuity on the conductive band side at a joint interface to the light-emitting layer 2 is at least 0.2 eV mode to be interposed. |
