| 摘要 |
PROBLEM TO BE SOLVED: To provide a photovoltaic device, with high conversion efficiency and improved durability for light irradiation by forming light-absorbing layer of a photovoltaic element placed in an incidence of light with indium nitride, while light-absorbing layer of another photovoltaic element is composed of crystalline silicon, and a method of manufacturing thereof. SOLUTION: A tandem photovoltaic device consists of a top cell 41 and a bottom cell 31 for their basic structural elements. The bottom cell 31 consists of an n-type or p-type single crystalline or polycrystalline silicon substrate 1, a p-type or n-type single crystalline or polycrystalline silicon layer 2, a surface electrode layer 4 and a backside electrode layer 3. The light-absorbing layer of the photoelectric element is single crystalline or polycrystalline silicon 1. The top cell 41 consists of an n-type or p-type InN layer 6, a p-type or n-type InN layer 7, and a transparent conductive layer 3. The light-absorbing layer of the cell is InN layer 6, and the p-type InN layer contains group II elements. In the top cell placed in an incidence of light, indium nitride is used for the light-absorbing layer, while in the bottom cell, crystalline silicon is used for the light-absorbing layer. |
