| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device which is high in long-term reliability and restrained from deteriorating in withstand voltage performance particularly after it is subjected to a heat cycle test by a method wherein an insulating substrate is enhanced in withstand voltage characteristics. SOLUTION: A coating film 4 is made to contain inorganic particles so as to be lessened in thermal expansion coefficient, whereby the coating film 4 is lessened from varying in volume in a heat cycle. At the same time the relative dielectric constant of the coating films4 is set close to that of an insulating board 1, or silicon carbide which shows non-linear resistance is used as the inorganic particles so as to relax an electric field around an electrode. By this setup, a power semiconductor device excellent in withstand voltage characteristics can be provided. |
