| 摘要 |
PROBLEM TO BE SOLVED: To provide an accurate guideline for manufacturing a semiconductor device which is strong against cosmic ray neutron software errors, by calculating the cosmic ray neutron software error rate of the semiconductor device based on a charge quantity collected on the surface of an element region from all small regions. SOLUTION: The element region of a semiconductor device is divided into a plurality of small regions in a depth direction, and a process of calculating a potential difference between each small region and the adjacent small regions is executed. Based on the potential difference, a process of calculating a probability that a carrier generated in each small region moves to the adjacent small regions by a cosmic ray neutron, a process of calculating a charge quantity collected on the surface of the element region by small region, by multiplying a probability that the carrier, which is generated in each small region by the cosmic ray neutron, reaches the surface of the element region by the charge quantity generated in each small region by the cosmic ray neutron, and a process of calculating the sum of the charge quantities collected on the surface of the element region by small region, are executed. Thus, the charge quantity collected on the surface of the element region from all the small regions can be accurately calculated. |
