| 摘要 |
PROBLEM TO BE SOLVED: To detect the signal stored in an information storage capacity element with high sensitivity by preventing a parasitic capacity of bit line from increasing, related to a DRAM where memory cell size is finer. SOLUTION: By allowing the width of a bit line BL narrower than a minimum work dimension which is decided by the resolution limit of photo-lithography, a parasitic capacity formed between adjoining bit lines is reduced. In order to make the width of the bit line BL more minute, a photo-resist film 43 is cut by ashing using ozone so that the width of a bit line pattern 43a is narrower than a minimum work dimension. |
