ELECTRONIC COMPONENT HAVING DOPED METAL OXIDE DIELECTRIC MATERIAL AND MANUFACTURING PROCESS OF ELECTRONIC COMPONENT HAVING DOPED METAL OXIDE DIELECTRIC MATERIAL

摘要

PROBLEM TO BE SOLVED: To obtain a dielectric material for forming a thin dielectric layer having allowable leakage characteristics and other characteristics by being composed of a metal oxide of a group III metal or group VB metal doped with a group IV element and specified quantity of dopant to the metal oxide. SOLUTION: A doped dielectric material used as a gate dielectric material in an MOSFET device 10 is a metal oxide of a group III or VB metal doped with a group IV element and the doped metal oxide contains a dopant about 0.1-30 wt.%. Owing to the existence of the dopant, defects in the bulk of the metal oxide and defects, i.e., unbound bonds and strain couplings formed at a semiconductor adjacent to the metal oxide or interface between metal layers a lessened in no. and grain boundaries in the bulk material and interface between the dielectric material and adjacent layers can be stabilized and the electric characteristic of the dielectric material can be improved.