| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-resistance load-type SRAM which is lessened in manufacturing cost and number of processes where a high-resistance load is formed. SOLUTION: A hole 8 is bored in an SOI board 1 provided with a buried oxide film 2 from above the surface of the board 1 penetrating through the oxide film 2, and the hole 8 is filled up with a polysilicon 9 when the polysilicon 9 is deposited on the SOI board for forming the gate electrode 11 of an SRAM transistor. Thereafter, impurities are introduced into the board 1 through its surface, whereby the deposited polysilicon 9 except its part filled into the hole 8 is lessened in resistivity and turned into a low-resistivity polysilicon 9', and the polysilicon 9 inside the hole 8 serves as a high-resistance load of an SRAM. The polysilicon 9 is lessened in resistivity even at the upper part of the hole 8 adjacent to a drain region 14. |
