发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent a semiconductor device composed of transistor units or a pair of transistor units from oscillating, and to detect a bonding failure through a DC manner without making an RF selection in the semiconductor device where gate pads or drain pads are connected together. SOLUTION: In a semiconductor device possessed of transistor units or pairs of transistor units, the gate pads 221 of adjacent transistor units are connected together with a gate lead-out electrode connection wiring 23 possessed of a resistor 27 of resistance 0.6 to 10 Ω. Furthermore, the drain pads 211 are connected together with a drain lead-out electrode connection wiring 241.
申请公布号 JPH11297849(A) 申请公布日期 1999.10.29
申请号 JP19990011758 申请日期 1999.01.20
申请人 NEC CORP 发明人 INOUE HISAAKI;WATANABE TOSHIRO
分类号 H01L21/60;H01L21/8234;H01L23/482;H01L27/06;H01L27/088;H01L29/417;H01L29/423;H01L29/43;H01L29/78 主分类号 H01L21/60
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