Matrix for magneto-random-access-memory or MRAM for controlling components enables components to be addressed or switched with low current levels

摘要

The matrix has first (1.1,..) and second (2.1,..) current feed lines that intersect at a component (3.1,..). The second current feed line is arranged in parallel with the first current feed line near the component. A series of first current feed lines, a series of seconds current feed lines and a group of components can be provided, with each first line and each second line intersecting at a component.