VERTICAL BIPOLAR TRANSISTOR, IN PARTICULAR WITH SiGe BASE HETEROJUNCTION AND METHOD FOR MAKING SAME

摘要

The semiconductor region of an intrinsic collector (4) is surrounded with a lateral insulating region (2). A semi-conducting layer (6) comprising a SiGe heterojunction is partially located between the transmitter (90) and the intrinsic collector (4) and extends on either side of the transmitter above the lateral insulating region. The base intrinsic region (60) is formed in said semi-conducting layer with heterojunction between the transmitter (90) and the intrinsic collector (4). The base extrinsic region and the collector extrinsic region respectively comprise first zones (61, 63) formed in said semi-conducting layer with heterojunction, located respectively on either side of the transmitter and above the lateral insulating region first part (200, 201) and mutually electrically insulated by the lateral insulating region second part.