| 摘要 |
The manufacture of a trench-gate semiconductor device, for example a MOSFET or IGBT, includes the steps of forming at a surface (10a) of a semiconductor body (10) a first mask (51) having a first window (51a), and later forming a second mask (52) having a smaller window (52a) by providing sidewall extensions (52b) on the first mask (51). A source region (13) is formed by dopant (63) introduced via the first window (51a), whereas a trench (20) is etched at the smaller window (52a) to extend through a body region (15) and into an underlying portion of a drain region (14). The gate (11) is provided in the trench (20) adjacent to where the channel (12) of the device is accommodated. After removing the second mask (52), a source electrode (23) is provided to contact the source region (13) and an adjacent region (15) of the body (10) at the surface (10a). This method permits the use of self-aligned masking techniques while providing good reproduceability in the doping of the source region (13) and adjacent region (15) and in the contact area of the source electrode (23) with both the source region (13) and the adjacent region (15). |
