THIN-FILM TRANSISTOR AND MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the throughput of a method for manufacturing liquid crystal display device by eliminating the need for dehydrogenation which has been required before excimer laser annealing after an amorphous Si film formation in conventional examples. SOLUTION: An amorphous Si film 15A is formed on a glass substrate 10 by the intermittent discharge plasma CVD method. When the Si film 15A is formed by the intermittent discharge plasma CVD method, the hydrogen concentration in the Si film 15A can be suppressed to a low value. Then the amorphous Si film 15A is changed into a polysilicon film 15B by performing excimer laser annealing on the amorphous Si film 15A.