发明名称 CRYSTALLINE GAS DISTRIBUTOR FOR SEMICONDUCTOR PLASMA ETCH CHAMBER
摘要 A process chamber (15) for processing a semiconductor substrate comprising a support (20) for holding the substrate, a gas distributor (35) for distributing process gas into the process chamber, a gas energizer for energizing the process gas, and an exhaust (60) for exhausting process gas from the process chamber. The gas distributor (35) comprises monocrystalline material that provides increased erosion resistance and withstands high temperatures. Preferably, a thermal expansion isolator (115) supports the gas distributor (35) to allow portions of the gas distributor (35) to thermally expand different amounts. The gas distributor (35) can also comprise a transparent window (170) of solid material that transmits a light beam therethrough. Also, the gas distributor (35) can comprise a transparent portion facing the substrate (25) that allows light emissions from the energized gas to pass through without being reflected back onto the substrate.
申请公布号 WO9954908(A1) 申请公布日期 1999.10.28
申请号 WO1999US07584 申请日期 1999.04.05
申请人 APPLIED MATERIALS, INC. 发明人 HERCHEN, HARALD;BROWN, WILLIAM;NZEADIBE, IHI;KUJANECK, DAN
分类号 C23F4/00;C23C16/44;C23C16/455;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H05H1/46 主分类号 C23F4/00
代理机构 代理人
主权项
地址