发明名称 |
A METHOD OF CHEMICAL MECHANICAL POLISHING A METAL LAYER |
摘要 |
In the formation of metal vias, plugs or lines, a metal layer (18) is deposited onto a non-planar non-metallic surface of a substrate (10). The metal layer (18) is chemical mechanical polished with a first polishing pad (100) until the metal layer (18) is substantially planarized and a residual layer (19) having a thickness about equal to the depth of potential microscratches (120), between about 200 and 1000 angstroms, remains over the non-metallic surface (14). The residual layer (19) is chemical mechanical polished with a second, softer polishing pad (110) until the non-metallic surface (14) is exposed.
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申请公布号 |
WO9954088(A1) |
申请公布日期 |
1999.10.28 |
申请号 |
WO1999US07542 |
申请日期 |
1999.04.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FISHKIN, BORIS;WIJEKOON, KAPILA;LIN, RONALD |
分类号 |
B24B37/04;H01L21/321;H01L21/768;(IPC1-7):B24B37/04 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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