| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory and test method thereof whereby the failure analyzing time can be reduced and yield can be improved by detecting memory cells being in the deplete state. SOLUTION: The test method is such that a high threshold state of a memory cell corresponds to an erase state, a low threshold state of the memory cell corresponds to a date write state, the sources of a plurality of memory cells are connected to a common source line provided with a voltage switching means for feeding a higher voltage e.g. 1 V than at the data read in a deplete test to the common source line, applying a lower voltage e.g. 1.5 V than at the data read to a not selected word line of 0 V to a selected word line, and precharging bit lines to a higher potential e.g. 2 V than at the data read.</p> |
