发明名称 Semiconductor device having a protective wiring layer
摘要 A semiconductor device includes a semiconductor chip, a protective wiring layer, and an abnormality detector. At least one of integrated circuits is formed on the semiconductor chip. The protective wiring layer is formed to be spread on the integrated circuit at a very small interval, and made of a conductive light-shielding material. The protective wiring layer is applied with a power supply voltage upon operating the integrated circuit. The abnormality detector monitors the voltage applied to the protective wiring layer and outputs an abnormality detection signal when the monitored voltage is an abnormal voltage. <IMAGE>
申请公布号 EP0874401(A3) 申请公布日期 1999.10.27
申请号 EP19980107308 申请日期 1998.04.22
申请人 NEC CORPORATION 发明人 KUSABA, KAZUYUKI;IWAMOTO, MAKOTO
分类号 H01L21/8247;H01L21/822;H01L23/552;H01L23/58;H01L27/04;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L23/552 主分类号 H01L21/8247
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