| 摘要 |
The thyristor has first thyristor structure between two main surfaces (2,3) with a first anode region (4), n-base (5), p-base (6), cathode region (7) and central gate region and an antiparallel second thyristor structure with a second anode region (9), n-base (10), p-base (11), cathode region (12) and central gate region. The first anode region, second cathode region and second gate region are associated with the first main surface and the second anode region, first cathode region and first gate region with the second main surface. Separating regions (16) between the thyristor structures on both main surfaces lie between the anode and cathode regions. Short circuit regions short the p-bases to the cathode regions via metallisation bridging the cathode regions. The density per unit area of the short circuit region (16) increases towards the separation region (14) and reaches a maximum immediately adjacent to it. |
