Method capable of accurately simulating ion implantation at a high speed,申请号EP19970119082-传众专利搜索

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发明名称	Method capable of accurately simulating ion implantation at a high speed
摘要
申请公布号	EP0840243(A3)	申请公布日期	1999.10.27
申请号	EP19970119082	申请日期	1997.10.31
申请人	NEC CORPORATION	发明人	SAWAHATA, KOICHI
分类号	H01L21/265;G06F17/50;H01L21/00;(IPC1-7):G06F17/50	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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