| 摘要 |
The present invention discloses a converging type solar cell element able to restrain recombination of carriers and inflow of carriers into an embankment section and improve photoelectric conversion efficiency. A p+ diffusion layer 16 is formed on the surface of a sunlight receiving section 10 which is formed on a silicon substrate 12 comprising a p-type silicon. An energy gradient arises between the p+ diffusion layer 16 and the silicon substrate 12. Therefore, free electrons, which are minority carriers among the carriers generated in the silicon substrate 12 resulting from irradiation of sunlight to the sunlight receiving section 10, can be prevented from migrating to the surface side of the silicon substrate 12. Further, recombination of free electrons which may arise due to lattice defects of the surface can also be prevented. Still further, the p+ diffusion layer 16 may also be formed on a back surface side of the embankment section 14 which surrounds the sunlight receiving section 10. Due to operation of the aforementioned energy gradient, inflow of the free electrons, which are minority carriers, into the embankment section can be prevented.
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