| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching mask which allows the accurate execution of anisotropic etching by dry etching and is capable of forming patterns of a rectangular shape in section on a workpiece and a method for manufacturing the same. SOLUTION: The etching mask 11 is formed of a metallic material, such as 'Permalloy (R)' (NiFe), and its cross section is formed to a Tee shape consisting of a vertical bar part 11a of a width W1 and a cross bar part 11b of a width W2 . If ion beam etching is executed by using this etching mask 11, the region of the surface of the work piece 10 not covered with the etching mask 11 is selectively chipped off by the cast ion beam 12. The region of a shadow by the cross bar part 11b with respect to the vertical bar part 11a is formed at the etching mask 11 and the redeposition part 13 of the splashed material is formed, by which the width of the region near the boundary with the workpiece 10 of the vertical bar part 11a to substantially determine the pattern width is prevented from changing.
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