| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a desired film uniform in film thickness on the surface of a member to be treated by including a plurality of transport members side by side along the transport direction which are freely controlled independently of each other, varying the moving speed of each transport member and suitably rotating the material to be treated to be moved while its orientation is changed. SOLUTION: Plural semiconductor wafers 2 are driven in the moving direction 5. Seven annular and meshlike transport belts 1a-1g forming a wafer transport device have the respective moving speeds 6a-6g, and the speeds can be respectively adjusted. When the moving speeds 6a-6g of the transport belts 1a-1g are set in the order of increasing the speed, the semiconductor wafers 2 are moved in the moving direction 5, and simultaneously rotated clockwise 4 seen from the top. The semiconductor wafers 2 are thus moved while being rotated under a reaction gas jetting device, whereby the reaction gas jetted from the reaction gas jetting device can be uniformly sprayed to the semiconductor wafers 2.</p> |
