发明名称 |
High throughput optical curing process for semiconductor device manufacturing |
摘要 |
This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.
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申请公布号 |
US5972803(A) |
申请公布日期 |
1999.10.26 |
申请号 |
US19970955422 |
申请日期 |
1997.10.22 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SHU, JING SHING;HWANG, MING-JANG;MOSLEHI, MEHRDAD M.;DAVIS, CECIL J. |
分类号 |
B29C35/02;B29L31/34;H01L21/3105;H01L21/314;H01L21/768;H01L23/522;(IPC1-7):H01L21/469;H01L21/02 |
主分类号 |
B29C35/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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