| 摘要 |
PROBLEM TO BE SOLVED: To provide the subject quartz crucible intended for standing its use for a long time by setting the surface roughness inside the crucible at least coming into contact with silicon melt within a specific range so as to uniformly produce silica glass crystal phase on the inside surface in a short time. SOLUTION: This quartz crucible is so designed that the arithmetically mean roughness (Ra) of the surface inside the crucible satisfies the relationship: 0.02μm<=Ra<=20.0μm; preferably, the maximum roughness (Rmax) and the minimum roughness (Rmin) satisfy the relationship: Rmax/Rmin<=10; that is, the surface inside the crucible is made uneven to afford the nucleus-forming sites for silica glass crystal phase intentionally uniformly and also in high density so as to ensure the surface to be entirely covered in a short time with silica glass crystal phase (e.g. cristobalite phase) forming on the surface on contacting it with sinicon melt; therefore, even if the crucible is used for a ling time, the surface uniformly dissolves in the silicon melt, and the resulting silicon single crystal is free from surface roughness with slight section debonding.
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