| 发明名称 |
In-situ barc and nitride etch process |
| 摘要 |
A method for etching a semiconductor device (10) having BARC layer (22) and nitride layer (20) includes etching BARC layer (22) until reaching a first set point in the fabrication reaction chamber and then etching nitride layer (20) in-situ the fabrication reaction chamber immediately following etching BARC layer (22).
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| 申请公布号 |
US5972796(A) |
申请公布日期 |
1999.10.26 |
| 申请号 |
US19970988049 |
申请日期 |
1997.12.10 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YANG, MING;KAIDA, MASAHIRO;LASSISTER, TOM;FISHBURN, FRED D. |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L27/10;(IPC1-7):H01L21/306;H01L21/306;B44C1/22 |
主分类号 |
H01L21/302 |
| 代理机构 |
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