| 摘要 |
PROBLEM TO BE SOLVED: To provide epoxy resin compositions excellent in retention of ferroelectricity of ferroelectrics memory. SOLUTION: A desired epoxy resin composition comprises (A) an epoxy resin; (B) a phenolic resin curing agent; (C) an inorganic filler; (D) a curing promoter; and (E) one or more members selected from a non-organosilicon compound type stress reducing agent and an organosilicon compound as the essential components, and has an amount of hydrogen gas generated after heating at 175 deg.C for 90 minutes of not more than 20 nmol per gram of the total resin composition and, preferably an amount of hydrogen gas generated after heating of the non-organosilicon compound type stress reducing agent or the organosilicon compound at 175 deg.C for 90 minutes of not more than 0.5μmol per gram, and the compounding amount of the one or more members selected from a non-organosilicon compound type stress reducing agent and an organosilicon compound being not greater than 4.0 wt.% of the total resin composition. Ferroelectrics memory devices are sealed with this epoxy resin composition.
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