| 发明名称 |
Semiconductor device having a copper wiring layer formed on a base via a barrier layer of amorphous tantalum carbide |
| 摘要 |
A semiconductor device including, a wiring layer whose main component is copper being formed on a base via a barrier layer of amorphous tantalum carbide.
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| 申请公布号 |
US5973400(A) |
申请公布日期 |
1999.10.26 |
| 申请号 |
US19970822126 |
申请日期 |
1997.03.21 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MURAKAMI, MASANORI;OKU, TAKEO;DOI, TSUKASA |
| 分类号 |
C23C14/06;H01L21/28;H01L21/3205;H01L23/52;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
C23C14/06 |
| 代理机构 |
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代理人 |
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