发明名称 |
Field effect-controllable semiconductor component |
摘要 |
The field effect-controllable semiconductor component has a drain zone of the first conductivity type and also at least one gate electrode which is composed of polycrystalline silicon and is insulated from the drain zone. A source region of the second conductivity type is introduced in the drain zone. In addition, there is formed in the drain zone a trench structure, which reach from the surface of the epitaxial layer down into the substrate layer. An additional field plate made of polysilicon and embedded in an oxide layer is introduced in the trench structure. The thickness of the oxide surrounding the field plate increases down in a direction towards the drain.
|
申请公布号 |
US5973360(A) |
申请公布日期 |
1999.10.26 |
申请号 |
US19980157704 |
申请日期 |
1998.09.21 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TIHANYI, JENOE |
分类号 |
H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|