| 摘要 |
An object of the present invention is to provide a semiconductor memory cell capable of ensuring a large surface area of each of a plurality of storage electrodes thereby to increase the capacity of a capacitive portion (capacitor) formed between the storage electrode and a cell plate electrode, in other words, greatly increasing the capacity of the memory cell and to provide a method of manufacturing the semiconductor memory cell. The storage electrode is structured so as to have oblique inclinations. A semiconductor memory cell is normally selected by applying a voltage to a word line so as to start up the word line. Thus, the reading of information from or writing of it into the selected semiconductor memory cell is performed. The information is transferred to the corresponding memory cell from the outside of the memory cell through its corresponding bit line. Alternatively, the information is transferred to the outside. The retention of the information in the memory cell is carried out by electric charges stored in the capacitor formed between the storage electrode and the cell plate electrode. Therefore, the greater the capacity of the capacitor, the higher the performance of the memory cell is made.
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