Plasma etching using polycarbonate mask and low pressure-high density plasma

摘要

Provided is a method of etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure in a reaction chamber, the etch structure including an etch layer underlying a polycarbonate layer, the polycarbonate layer having apertures. The etch layer is then etched using a low pressure-high density plasma generate at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 1011 ions/cm3 and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be heated or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.