Static semiconductor memory device with reduced power consumption, chip occupied area and access time

摘要

Memory blocks having word lines driven into selected states independently of each other are provided in correspondence to data input/output bits respectively. Each memory cell includes a bipolar transistor and a MOS transistor. In each memory block, a current flows to a bit line only of a selected column, and a 1-bit memory cell is accessed therein. Thus, sense amplifiers and write drivers have only to be provided in numbers corresponding to that of the data bits, whereby the circuit occupying area as well as current consumption are reduced.