Ion implantation feedback monitor using reverse process simulation tool

摘要

A method of obtaining accurate actual ion implantation equipment used in ion implantation processes during the manufacture of semiconductor devices. A monitor structure for each ion implant process is implanted with ions during the ion implant process. A control monitor structure is implanted with boron ions. The concentration profiles of all implanted monitor structure are determined during wafer electrical tests (WET). The as-implanted concentration profile is determined for the boron-implanted control monitor structure and the thermal budget of the manufacturing process is determined. The as-implanted concentration profiles of the remaining monitor structures are determined using the thermal budget determined from the boron-implanted control monitor structure. The actual operating parameters of the ion implantation equipment is determined from the as-implanted concentration profiles.