发明名称 |
Semiconductor laser and method of manufacturing the same |
摘要 |
A semiconductor laser has a first conduction type clad layer, an active layer and a second conduction type clad layer formed on a first conduction type semiconductor substrate in this order. An inverted mesa-shaped ridge is formed on a part of the second conduction type clad layer and a first conduction type current stopping layer is formed on each side of the ridge. Each side of the inverted mesa-shaped ridge is curved into a concave surface in a plane perpendicular to the longitudinal direction of the ridge.
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申请公布号 |
US5974067(A) |
申请公布日期 |
1999.10.26 |
申请号 |
US19970815083 |
申请日期 |
1997.03.11 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
ASANO, HIDEKI |
分类号 |
H01L33/06;H01L33/14;H01L33/30;H01L33/44;H01S5/00;H01S5/20;H01S5/223;(IPC1-7):H01S3/19 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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