发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A first conductivity layer and a first insulating film are successively formed on a channel layer, and a photoresist film is formed on the first insulating film. The photoresist film is selectively exposed to light using a photomask and patterned. Using the patterned photoresist film as a mask, the first insulating film and the first conductivity layer are etched to form source electrodes from the first conductivity layer. Using the first insulating film and the source electrodes as a mask, an impurity of one conductivity type is diffused into exposed portions of the channel layer to form source regions. A second insulating film is formed in covering relation to side walls and upper surfaces of the source electrodes. Using the second insulating film as a mask, the channel layer and the common drain layer are etched to form trenches in the source regions, the channel layer, and the common drain layer. A third insulating film is formed on surfaces of the trenches, and a second conductive layer is formed as a gate electrode on the entire surface so as to fill up the trenches and cover the second insulating film.
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申请公布号 |
US5972741(A) |
申请公布日期 |
1999.10.26 |
申请号 |
US19970958992 |
申请日期 |
1997.10.28 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KUBO, HIROTOSHI;KUWAKO, EIICHIROH;KITAGAWA, MASANAO;ONDA, MASAHITO;SAITOU, HIROAKI;ODAJIMA, KEITA |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/352 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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