发明名称 Semiconductor circuit device with high electrostatic breakdown endurance
摘要 In a semiconductor circuit device, an internal circuit, a common wiring pattern, a plurality of external terminals including a ground terminal, and a plurality of protection elements is provided. Each of the plurality of protection elements is connected to one of the plurality of external terminals and the common wiring pattern. Each protection element includes a clamp circuit. The clamp circuit of each of the plurality of protection elements respectively connected to the plurality of external terminals other than the ground terminal has a clamp voltage higher than a power supply voltage supplied to the internal circuit. On the other hand, the clamp circuit of the protection element connected to the ground terminal as a ground terminal clamp circuit has a clamp voltage lower than those of the clamp circuits other than the ground terminal clamp circuit.
申请公布号 US5973901(A) 申请公布日期 1999.10.26
申请号 US19970904917 申请日期 1997.08.01
申请人 NEC CORPORATION 发明人 NARITA, KAORU;FUJII, TAKEO
分类号 H01L27/04;H01L21/822;H01L27/02;(IPC1-7):H02H3/22 主分类号 H01L27/04
代理机构 代理人
主权项
地址