| 发明名称 |
Method for removing photoresist and plasma etch residues |
| 摘要 |
A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant. |
| 申请公布号 |
AU6955698(A) |
申请公布日期 |
1999.10.25 |
| 申请号 |
AU19980069556 |
申请日期 |
1998.04.06 |
| 申请人 |
OLIN MICROELECTRONIC CHEMICALS, INC. |
发明人 |
VINCENT G. LEON;KENJI HONDA;EUGENE F. ROTHGERY |
| 分类号 |
C11D7/32;C11D3/39;C11D7/02;C11D7/06;C11D7/08;C11D7/10;C11D11/00;C23G1/02;C23G1/06;G03F7/42;H01L21/02;H01L21/311;H01L21/3213 |
主分类号 |
C11D7/32 |
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